一、 標稱容量Capacitance ：

10pF,65pF,100pF,470pF,500pF,1000pF,1200pF,1500pF,1750pF,2000pF,2500pF,2700pF,

3000pF,3300pF,4700pF,5000pF,5500pF,6800pF,7000pF,9000pF,10000pF,0.01μF,0.012μF,
0.015μF,0.018μF,0.022μF,0.025μF,0.027μF,0.028μF,0.045μF,0.050μF,

0.056μF,0.075μF,0.08μF,0.1μF,0.15μF,0.21μF,0.3μF,0.75μF,0.8μF,1μF,

0.015μF,0.060μF,0.062μF,0.150μF,0.200μF,0.250μF,0.250μF,0.300μF,0.450μF,0.500μF,
0.7μF,0.750μF,0.990μF,1.0μF,1.2μF,1.4μF,1.5μF,2.1μF,2.8μF,

4.0μF,5.2μF

101100pF      331330pF    471 470pF
102 1000pF     3323300pF   4724700pF 
103 10000pF    33333000pF  47347000pF

1000pF=1nF  1000000pF=1μF  1000nF=1μF  1μF=1000nF=1000000pF  1F=1000000μF 

 

Code	Capacitancetolerance	Code	Capacitancetolerance
F	± 1pF	S	+ 50%, –20%
K	±10%	Z	+ 80%, –20%
M	±20%	P	+100%, – 0%

 

二、工作電流Rated Current ：

0.06A,0.15A,0.25A,0.3A,0.45A,0.5A,1A,2A,3A,4A,5A,10A,15A,25A,50A,100A

三、額定電壓Rated Voltage ：

直流：5V,28V,35V,50V,60V,70V,80V,100V,150V,200V,250V,275V

     300V,330V,350V,400V,450V,500V,600V,750V,1250V,2500V

交流：70V,85V,90V,115V,125V,140V,200V,220V,230V,240V,330V,350V

四、耐電壓DielectricWithstandingVoltage ：

直流：額定電壓的2.5倍      交流：額定電壓的6倍的直流電壓

五、工作溫度WorkingTemperatureRange：

E：-10-+85℃  F：-25-+85℃  G：-30-+125℃

H：-40-+85℃  I：-55-+85℃  J：-55-+125℃

 

溫度特征	電容變化	溫度范圍
SL	SL(0±30ppm/°C)	–25~+ 85°C
B	B(+10~ –10%)
D	D(+20~ –30%)
E	E(+20~ –55%)
F	F(+30~ –80%)
C	CG(+350~ –1000ppm/°C)	–55~+125°C
R	R(+15~ –15%)

 

六、EMI濾波器的構成
濾波電容
濾波器所用的電容一般為陶瓷電容。由于其物理結構，這種陶瓷電容又稱為穿心式電容。
穿心式電容自電感較普通電容小得多，故而自諧振頻率很高。同時，穿心式設計，也有效
地防止了高頻信號從輸入端直接耦合到輸出端。這種低通高阻的組合，在1GHz 頻率范圍內，
提供了極好的抑制效果。
*簡單的穿心結構是由內外電極和陶瓷構成的一個（C 型）或兩個電容（Pi 型）。
這種電容的容量可從10pF，工作電壓可達2000VDC。管式穿心電容因為其同軸性，即使在
10GHz 頻率，也不會產生明顯的自諧振。
穿心電容的介質為陶瓷介質，而陶瓷電容的容量會隨環境溫度變化而變化，這種容量變化
會影響濾波器的濾波截止率。陶瓷電容的容量溫度變化率是由陶瓷介質本身決定的。因此，
選擇適當的陶瓷介質非常重要。常見陶瓷介質及其容量溫度變化率如下：